Open AccessQD-LED devices using ZnSnO as an electron-transporting layer
Author(s) -
Bozhi Liu,
Ruifeng Li,
Lei Song,
Lian Hu,
Bingpo Zhang,
Yongyue Chen,
Jian-Zhong Wu,
Bi Gang,
Miao Wang,
Huizhen Wu
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.158504
Subject(s) - materials science , electroluminescence , optoelectronics , light emitting diode , quantum dot , layer (electronics) , thin film , diode , semiconductor , electron , nanotechnology , physics , quantum mechanics
We have investigated the light-emitting diodes based on colloidal CdSe quantum dots (QD-LEDs), in which inorganic ZnSnO thin films and organic TPD thin films were used as the electron-transporting layer (ETL) and hole-transporting layer (HTL), respectively. The quantum dots were embedded between the inorganic ETL and organic HTL to form a sandwich structure. ZnSnO ETL was made by magnetron sputtering, while the TPD and QD films were made by spin-coating method. The QD-LEDs display sharp interface and smooth morphology. Optical and electrical characterizations show that QD-LEDs have low turn-on voltage, good monochromaticity, bright electroluminescence and good stability in atmosphere ambient. These characteristics are attributed to the utility of high electron mobility and low carrier concentration of the ZnSnO films used as the ETL. To investigate the devices operation mechanism, the conductivity of ZnSnO was varied during deposition to realize equal injection rate for both electrons and holes, which allows the device to operate optimally.