Open AccessMicrostructural and photoelectrical properties of oxygen-ion-implanted microcrystalline diamond films
Author(s) -
Fenghao Wang,
Xiaojun Hu
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.158101
Subject(s) - microcrystalline , luminescence , materials science , annealing (glass) , raman spectroscopy , diamond , cathodoluminescence , ion , oxygen , conductivity , electrical resistivity and conductivity , analytical chemistry (journal) , optoelectronics , optics , composite material , crystallography , chemistry , physics , electrical engineering , chromatography , organic chemistry , engineering
The influences of oxygen ion dose and annealing temperature on the microstructural and photoelectrical properties of microcrystalline diamond films with Si-V luminescence centers were systematically investigated. Results show that high temperature annealing prefers to increase the Si-V luminescence intensity in oxygen-ion-implanted microcrystalline diamond films. With oxygen ion dose increasing from 1014 to 1015 cm-2, the Si-V luminescence intensity of the films enhances. Hall effects measurement show that the resistivity of the films becomes lower after annealing. At different annealing temperatures, the oxygen-ion-implanted microcrystalline diamond films with stronger Si-V luminescence intensity exhibit larger resistivity, indicating that the Si-V luminescence centers are not favorable to the enhance ment of the conductivity of films. Results of Raman spectroscopy show that the increase of defects in films will enhance Si-V luminescence intensity and decrease the conductivity of the films.