Open AccessSerial ferroelectric memory ionizing radiation effects and annealing characteristics
Author(s) -
Xingyao Zhang,
Qi Guo,
Wu Lu,
Xiaofu Zhang,
Qiwen Zheng,
Jiangwei Cui,
Yudong Li,
Dong Zhou
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.156107
Subject(s) - annealing (glass) , ionizing radiation , materials science , optoelectronics , irradiation , ferroelectricity , absorbed dose , radiation , transistor , oxide , metastability , radiation hardening , voltage , optics , electrical engineering , physics , nuclear physics , quantum mechanics , metallurgy , engineering , dielectric , composite material
Ferroelectric random memory was irradiated and annealed by 60Co-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing.