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Effect of raster scan number on damage resistance of KDP crystal irradiated by ultraviolet pulse laser
Author(s) -
Guo De-Cheng,
Xiaodong Jiang,
Jin Huang,
Xiang Xi,
Fengrui Wang,
Hongjie Liu,
Zhou Xin-Da,
Xiaotao Zu
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.147803
Subject(s) - materials science , irradiation , laser , ultraviolet , crystal (programming language) , raman spectroscopy , photoluminescence , optics , raster scan , optoelectronics , analytical chemistry (journal) , chemistry , physics , computer science , nuclear physics , programming language , chromatography
The raster scanning experiments for KDP crystal are carried out in R-on-1 mode at energy density below zero probability damage threshold to investigate the damage resistance capability as a function of pulse number after ultraviolet (UV) laser irradiation by using a tripled Nd:YAG laser. The1-on-1 damage measurements after laser irradiation indicate that the damage resistance of KDP is obviously enhanced and the increment is dependent on scanning number. The optical absorption and photoluminescence spectra show that the evolution of oxygen-vacancy centers in KDP crystal is important to the damage resistance capability. The Raman and infrared spectra show that the polarization distortions of PO4, P–OH and PO groups induced by UV laser irradiation also contribute to the changes of damage resistance.

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