Open AccessRaman spectra of monoand bi-layer graphenes with ion-induced defects-and its dispersive frequency on the excitation energy
Author(s) -
Qiaoqiao Li,
Han Wen-Peng,
Weiqian Zhao,
Lu Yan,
Xin Zhang,
PingHeng Tan,
Zhihong Feng,
Jia Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.137801
Subject(s) - raman spectroscopy , graphene , materials science , excitation , ion , spectroscopy , layer (electronics) , atomic physics , spectral line , molecular physics , optics , nanotechnology , physics , quantum mechanics , astronomy
Raman spectroscopy has become a key way for characterizing and studying disorder in graphene, due to its nondestructive, rapid and sensitive technique. In this paper, ion implantation is used to produce the structural defects in single-layer graphene (SLG) and bi-layer graphene (BLG). The first- and second-order modes of ion-implanted SLG and BLG and their physical origins were studied by Raman spectroscopy. The dependence of dispersive frequency of first- and second-order modes in SLG and BLG on the excitation energy was discussed in detail. Results show that the 2450 cm-1 peak is the combination mode of the D mode at 1350 cm-1 and the D" mode at 1150 cm-1.