Open AccessProperties of MgB2 ultra-thin films fabricated on MgO(111) substrate by hybrid physical-chemical vapor deposition
Author(s) -
潘杰云,
张辰,
何法,
冯庆荣
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.127401
Subject(s) - materials science , chemical vapor deposition , thin film , electrical resistivity and conductivity , residual resistivity , substrate (aquarium) , hybrid physical chemical vapor deposition , epitaxy , volumetric flow rate , deposition (geology) , combustion chemical vapor deposition , carbon film , nanotechnology , composite material , optoelectronics , analytical chemistry (journal) , layer (electronics) , chemistry , biology , engineering , paleontology , oceanography , quantum mechanics , physics , chromatography , sediment , geology , electrical engineering
We fabricate MgB2 ultra-thin films via hybrid physics-chemical vapor deposition technique (HPCVD). Under the same background pressure, the same H2 flow rate and the same deposition time, by changing the B2H6 flow rate, we fabricate a series of ultra-thin films with thickness values ranging from 10 nm to 40 nm. These films grow on MgO(111) substrate, and are all c-axis epitaxial. These films show the good connectivity, a very high Tc(0) ≈ 35-38 K and a very low residual resistivity ρ(42 K) ≈ 1.8-20.3 μΩ·cm-1. As the thickness increases, critical transition temperature also increases and the residual resistivity decreases. The 20 nm film also shows an extremely high critical current density Jc (0 T, 5 K) ≈ 2.3×107 A/cm2, which indicates that the films fabricated by HPCVD are well qualified for device applications.