Open AccessStudy on gate capacitance-voltage characteristics of strained-SiGe pMOSFET
Author(s) -
Bin Wang,
Heming Zhang,
Huiyong Hu,
Yuming Zhang,
Jianjun Song,
Chunyu Zhou,
Yuchen Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.127102
Subject(s) - materials science , capacitance , plateau (mathematics) , doping , optoelectronics , mosfet , gate voltage , threshold voltage , voltage , electrical engineering , physics , transistor , electrode , engineering , quantum mechanics , mathematical analysis , mathematics
The gate capacitance-voltage (C-V) characteristic of strained SiGe pMOSFET is very different from that of bulk Si pMOSFET, and can be strongly affected by the channel doping. In this paper, we first study the formation mechanism of the "plateau" which can be observed in the gate C-V characteristics of strained SiGe pMOSFET, and then present a physics based analytical model to predict the gate C-V characteristic of strained SiGe pMOSFET. It is found that this plateau is channel doping dependent. The results from the model are compared with the experimental results and they are found to be in excellent agreement with each other, giving the evidence for its validity.