Open AccessEffect of co-implantation of nitrogen and fluorine on the fixed positive charge density of the buried oxide layer in SIMOX SOI materials
Author(s) -
Baiqiang Zhang,
Zhongshan Zheng,
Yu Fang,
Ning Jin,
Tang Hai-Ma,
Yang Zhi-An
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.117303
Subject(s) - materials science , nitrogen , fluorine , ion implantation , layer (electronics) , silicon on insulator , charge density , capacitance , silicon , oxide , analytical chemistry (journal) , ion , optoelectronics , nanotechnology , chemistry , metallurgy , electrode , physics , organic chemistry , quantum mechanics , chromatography
Nitrogen ions implanted into the buried oxide layer can increase the total dose radiation hardness of silicon on insulator (SOI) materials. However, the obvious increase in positive charge density in the buried layer with high dose of nitrogen implantation leads to a negative effect on the technology of nitrogen implantation into buried oxide. In order to suppress the increase in positive charge density in the nitrogen-implanted buried layer, co-implantation of nitrogen and fluorine is used to implant fluorine into the nitrogen-implanted buried layer. High-frequency voltage-capacitance (C-V) technique is used to characterize the positive charge density in the buried layer. Results show that, in most cases, using the co-implantation of nitrogen and fluorine can significantly reduce the positive charge density in the nitrogen-implanted buried layer. At the same time, it is also found that further increase of the positive charge density induced by fluorine implantation in the nitrogen-implanted buried layer can occur in particular cases. It is proposed that the decrease in the positive charge density in the fluorine and nitrogen-implanted buried layer is due to the introduction of electron traps into the buried layer through fluorine implantation.