Open AccessLow-temperature growth of AlN thin films by plasma-enhanced atomic layer deposition
Author(s) -
Feng Jin,
Tang Lidan,
Bangwu Liu,
Xun Yang,
Qingqing Wang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.117302
Subject(s) - wurtzite crystal structure , materials science , x ray photoelectron spectroscopy , crystallite , thin film , substrate (aquarium) , ellipsometry , layer (electronics) , analytical chemistry (journal) , atomic layer deposition , transmission electron microscopy , deposition (geology) , nanotechnology , chemical engineering , chemistry , zinc , paleontology , oceanography , chromatography , sediment , geology , engineering , metallurgy , biology
The crystalline AlN thin film was fabricated on Si(100) substrates by plasma-enhanced atomic layer deposition. Its growth rate was illustrated by spectroscopic ellipsometer. And the surface morphology, crystal structure and composition were characterized by atomic force microscopy, X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy. Results show that the lowest temperature for deposition of the crystalline AlN thin film is 200 ℃, and the film coverage on the substrate surface is continuous and homogeneous. The film prepared with a homogeneous concentration distribution is polycrystalline with a hexagonal wurtzite structure. High resolution Al2p and N1s spectra confirm the presence of AlN with peaks located at 74.1 eV and 397.0 eV, respectively.