Open AccessStability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination
Author(s) -
Xifeng Li,
Enlong Xin,
Jianzhong Shi,
Longlong Chen,
Chunya Li,
Jianhua Zhang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.108503
Subject(s) - thin film transistor , materials science , optoelectronics , amorphous solid , threshold voltage , transistor , thin film , field effect , sputtering , hysteresis , voltage , layer (electronics) , condensed matter physics , electrical engineering , nanotechnology , chemistry , engineering , physics , organic chemistry
The amorphous indium-gallium-zinc-oxide (a-IGZO) thin films are prepared by radio frequency magnetron sputtering at ambient temperature. The transparent thin film transistors (TFT) fabricated at low temperature (a-IGZO active channel exhibits good electrical properties with a field effect mobility of around 10 cm2·V-1·s-1, subthreshold swing of 0.4 V/decade, and high Ionoff current ratio of over 107. Hysteresis is not observed when gate voltage sweeps forward and reverses. And the dependence of white LED illumination on characteristic of a-IGZO TFT is investigated. The results show that output characteristic is hardly affected, indicating the potential of the devices for transparent electronics In particular, illumination stability is investigated under white LED illumination stress test, and the a-IGZO TFT shows only 04 V shift in threshold voltage. The negative shift can be explained on the basis of trap of interface state.