Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor | Zendy

XU Li-jun | Zendy; Zhang He-Ming | Zendy

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Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor

Author(s) -

XU Li-jun,

Zhang He-Ming

Publication year - 2013

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.62.108502

Subject(s) - schottky barrier , materials science , drain induced barrier lowering , mosfet , threshold voltage , transistor , field effect transistor , optoelectronics , channel length modulation , schottky diode , metal–semiconductor junction , schottky effect , short channel effect , gate oxide , voltage , electrical engineering , diode , engineering

Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.

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