Open AccessDrain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor
Author(s) -
Lei Xu,
Heming Zhang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.108502
Subject(s) - schottky barrier , materials science , drain induced barrier lowering , mosfet , threshold voltage , transistor , field effect transistor , optoelectronics , channel length modulation , schottky diode , metal–semiconductor junction , schottky effect , short channel effect , gate oxide , voltage , electrical engineering , diode , engineering
Based on surrounding-gate schottky barrier metal-oxide semiconductor field transistor (MOSFET) structure, the distribution of surface potential is obtained by solving two-dimensional Poisson equation in cylindrical coordinates, and the threshold voltage model of surrounding-gate schottky barrier NMOSFET which is applicable to the low voltage of drain is built. According to the calculation results, the dependences of threshold voltage and drain-induced barrier-lowering on voltage of drain, channel radius and channel length are studied in detail, which can provide some reference for the design of surrounding-gate schottky barrier MOSFET device and circuit.