Open AccessEffect of synthesis temperature on preparation and field emission property of Ce-doped SiC nanowires
Author(s) -
Zhenjian Li,
Weidong Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.097902
Subject(s) - materials science , nanowire , selected area diffraction , field electron emission , transmission electron microscopy , scanning electron microscope , doping , field emission microscopy , diffraction , nanotechnology , analytical chemistry (journal) , electron , optoelectronics , optics , composite material , chemistry , physics , organic chemistry , quantum mechanics
In this paper, Ce doped-SiC nanowires were prepared by chemical vapor reaction technique at the different synthesis temperatures, and the field emission (FE) properties of the nanowires were measured. The products were characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), selected area electron diffraction (SAED) and X-ray diffraction (XRD). The results suggested that the products were β-SiC, the nanowires become bending and the content of Ce reduces with increasing temperature; the values of the turn-on and threshold field increase at first and then decrease. When the synthesis temperature is 1250 ℃, the content of Ce is 0.27 at%, the turn-on and threshold fields of the product are 2.5 V/μm and 5.2 V/μm.