Open AccessEffect of cooling of electron-hole plasma in electrically pumped graphene layer structures with split gates
Author(s) -
Yuping Zhang,
Lingyu Liu,
Qi Chen,
Zhihong Feng,
Wang Jun-Long,
Zhang Xiao,
Hongyan Zhang,
Huiyun Zhang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.097202
Subject(s) - materials science , graphene , terahertz radiation , lasing threshold , electron , plasma , electron cooling , population inversion , conductivity , condensed matter physics , electric field , optoelectronics , atomic physics , physics , optics , nanotechnology , quantum mechanics , wavelength , laser
We have studied the effect of population inversion associated with the electron and hole injection in graphene layer n-i-p structures with split gates at room temperature. Considering the transverse electric field screening of the n-section, we calculated the dependence of the electron-hole effective temperature and optical phonon effective temperature on the gate-voltage. It is shown that the injection can lead to cooling of the electron-hole plasma in n-section to the temperatures lower than the lattice temperature. The current-voltage characteristics, and the frequency-dependent dynamic conductivity are calculated, the frequency-dependent dynamic conductivity can be negative in the terahertz frequency range at a certain applied voltage. The study demonstrates that electron-hole plasma cooling can enhance the negative dynamic conductivity effect and improve the feasibility of terahertz lasing.