z-logo
open-access-imgOpen Access
Dielectric modulus response of CaCu3Ti4O12 ceramic
Author(s) -
Shengtao Li,
Hui Wang,
Lin Chen,
Jianying Li
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.087701
Subject(s) - materials science , ceramic , dielectric , conductivity , relaxation (psychology) , modulus , composite material , electrical resistivity and conductivity , bulk modulus , capacitance , optoelectronics , electrode , electrical engineering , physics , psychology , social psychology , quantum mechanics , engineering
The DC conductivity of the CaCu3Ti4O12 ceramic is considerable at low frequency. The dielectric properties of the CaCu3Ti4O12 ceramics are analyzed by dielectric spectrum, and the two relaxation processes are characterized by the dielectric modulus. The two relaxation processes are considered which are dominated by the electronic relaxation of deep bulk traps at the depletion layer edge. The low-frequency and high-frequency relaxation processes are attributed to oxygen-vacancy-related defect and native defect, respectively. It is proved that the modulus response of the CaCu3Ti4O12 ceramic is equivalent to conductivity response at high temperature (low frequency), and the peak value of the M" is inversely proportional to capacitance. The activation energies calculated by conductivity and modulus are equivalent to each other. The modulus spectrum is more effective to the material which has high DC conductivity at low frequency such as CCTO ceramic.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here