Open AccessStudy of Si K-shell X-ray emission induced by H+ and Ar11+ ions
Author(s) -
周贤明,
赵永涛,
程锐,
王兴,
雷瑜,
孙渊博,
王瑜玉,
徐戈,
任洁茹,
张小安,
梁昌慧,
李耀宗,
梅策香,
肖国青
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.083201
Subject(s) - ion , x ray , electron shell , materials science , shell (structure) , atomic physics , physics , optics , ionization , composite material , quantum mechanics
The L-shell X-rays of Si, induced by 50-250 keV proton and 1.0-3.0 MeV Ar11+ ions impacting are measured. It is found that the X-ray induced by Ar11+ is about 36 eV higher than that induced by proton. That indicates that 3, 4 L-shell electrons of Si atom are multiply-ionized by Ar11+ ion impact. The X-ray production cross section is extracted from the yield data and compared with the results from the BEA, PWBA and ECPSSR models. With the same unit incident energy, the cross section induced by Ar11+ is about 3 orders of magnitude larger than that produced by proton. For proton impact, the ECPSSR model gives an accurate prediction to the cross section data. However, the BEA model, considering the change of fluorescence yield due to the multiple-ionization, presents the results that are in better agreement with the experimental results for Ar11+ ions.