Open AccessPhysical compact modeling for threshold voltage of strained Si NMOSFET
Author(s) -
Chunyu Zhou,
Heming Zhang,
Huiyong Hu,
Yiqi Zhang,
Bin Su,
Bin Wang,
Guanyu Wang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.077103
Subject(s) - threshold voltage , poisson's equation , drain induced barrier lowering , channel (broadcasting) , materials science , voltage , very large scale integration , poisson distribution , doping , optoelectronics , computational physics , electronic engineering , computer science , physics , transistor , quantum mechanics , telecommunications , engineering , statistics , mathematics
The development of strained-Si physical compact threshold voltage model is based on Poisson's equation, using the gradual channel approximation (GCA) and coherent quasi-two-dimensional (2D) analysis, as well as taking into account the effects of short channel effect (SCE), narrow channel effect (NCE), non-uniform doping effect, and drain-induced barrier lowering (DIBL) effect. Moreover, the threshold voltage parameters are extracted from the experimental results by software. Finally, the validity of our model is derived from the comparison of our simulation results. The proposed model may be useful for the design and simulation of very large scale integrated circuits (VLSI) made of strained-Si.