Open AccessEffect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate
Author(s) -
Zhi Liu,
Yaming Li,
Chunlai Xue,
Buwen Cheng,
Qiming Wang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.076108
Subject(s) - photoluminescence , materials science , quantum dot , doping , substrate (aquarium) , epitaxy , chemical vapor deposition , optoelectronics , bilayer , boron , germanium , analytical chemistry (journal) , nanotechnology , silicon , layer (electronics) , chemistry , oceanography , geology , biochemistry , organic chemistry , chromatography , membrane
Four-bilayer Ge quantum dots (QDs) with Si spacers were epitaxially grown on Si(001) substrates by means of ultrahigh vacuum chemical vapor deposition. In two samples, Ge QDs were in situ doped with phosphorus or boron, separately. Surface morphology and room temperature photoluminescence (PL) of multilayer Ge/Si QDs wer studied. Compared with the undoped Ge QDs, phosphorus-doping did not change the morphology of Ge QDs, enhanced PL wer observed from the phosphorus-doped Ge QDs. But reduction of Ge QDs density and PL intensity wer observed from the boron-doped Ge QDs. The intensity enhancement of PL could be attributed to the sufficient supply of electrons in Ge QDs for radiative recombination.