Open AccessElectronic conductivity effective masses along arbitrary directional channel in uniaxial strained Si(001)
Author(s) -
靳钊,
乔丽萍,
郭晨,
王江安,
刘策
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.058501
Subject(s) - effective mass (spring–mass system) , materials science , electron mobility , conductivity , electron , condensed matter physics , nmos logic , stress (linguistics) , electronic band structure , strained silicon , optoelectronics , silicon , electrical engineering , physics , transistor , crystalline silicon , voltage , quantum mechanics , linguistics , philosophy , amorphous silicon , engineering
Electronic conductivity effective mass is one of the key parameters studing electron mobility enhancement in unixial strained Si material. Its in-depth study has the significant theoretical and practical values. In this paper, we first establish the E-k relation for conduction band in a unixial strained Si material. And the model of electronic conductivity effective mass along an arbitrary directional channel in the uniaxial strained Si (001) is obtained. Our concluding results are described as follows. 1) Tensile stress should be used to enhance electron mobility for unixial trained Si. 2) In the case of tensile stress application, both [110]/(001) and [100]/(001) directions are the desirable ones from the evaluation of electronic conductivity effective mass. And [110]/(001) direction should be preferable when the density of state effective mass is taken into consideration. 3) If [100] direction becomes the channel direction under [110]/(001) uniaxial strain, the further electron mobility enhancement will occur. The results above can provide valuable reference for the conduction channel design related to stress and orientation in the strained Si nMOS device.