Open AccessHigh-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
Author(s) -
Su Shao-Jian,
Dongliang Zhang,
Guangze Zhang,
Chunlai Xue,
Buwen Cheng,
Qiming Wang
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.058101
Subject(s) - materials science , molecular beam epitaxy , full width at half maximum , alloy , epitaxy , rutherford backscattering spectrometry , tin , transmission electron microscopy , germanium , yield (engineering) , analytical chemistry (journal) , optoelectronics , crystallography , thin film , nanotechnology , silicon , metallurgy , chemistry , layer (electronics) , chromatography
As a new group-IV semiconductor alloy, Ge1-xSnx is a very promising material for applications in photonic and microelectronic devices. In this work, high-quality germanium-tin (Ge1-xSnx) alloys are grown on Ge(001) substrates by molecular beam epitaxy, with x=1.5%, 2.4%, 2.8%, 5.3%, and 14%. The Ge1-xSnx alloys are characterized by high resolution X-ray diffraction (HR-XRD), Rutherford backscattering spectra (RBS), and transmission electron micrograph (TEM). For the samples with Sn composition x 5.3%, the Ge1-xSnx alloys each exhibit a very high crystalline quality. The ratio of channel yield to random yield (min) in the RBS spectrum is only about 5%, and the full width at half maximum (FWHM) of the Ge1-xSnx peak in HR-XRD curve is 100''. For the sample with x=14%, the crystalline quality of the alloy is degraded and FWHM is 264.6''.