Open Accessp-ZnO thin film/n-Si heterojunction light-emitting diode fabricated by chemical vapor deposition and its characterization
Author(s) -
冯秋菊,
蒋俊岩,
唐凯,
吕佳音,
刘洋,
李荣,
郭慧颖,
徐坤,
宋哲,
李梦轲
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.057802
Subject(s) - materials science , heterojunction , chemical vapor deposition , optoelectronics , electroluminescence , doping , photoelectric effect , annealing (glass) , chemical bath deposition , thin film , diode , analytical chemistry (journal) , nanotechnology , composite material , chemistry , layer (electronics) , chromatography
The Sb-doped ZnO film/n-Si heterojunction is synthesized by simple chemical vapor deposition method. The quality of crystal and surface morphology of Sb-doped ZnO film are improved after annealing at 800 ℃, which exhibits effective p-type conductivity with a hole concentration of 9.56× 1017 cm-3. The properties of the p-ZnO/n-Si heterojunction photoelectric device are investigated. The resuets show that this device has good rectifier characteristics with a positive open electric of 4.0 V, and a reverse breakdown voltage of 9.5 V. The electroluminescent is realized at room temperature under the condition of forward current 45 mA. These results also confirm that the high-quality ZnO film can be prepared by the simple chemical vapor deposition method, which opens the way for simple preparation of materials applied to ZnO based opto-electronic device.