Open AccessMicromagnetic simulation of magnetization reversal on the annular free layer with nick in magnetic random access memory
Author(s) -
Jianhong Hao,
Hui Gao
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.057502
Subject(s) - condensed matter physics , magnetoresistive random access memory , magnetization reversal , coercivity , materials science , magnetization , random access memory , micromagnetics , layer (electronics) , tunnel magnetoresistance , physics , magnetic anisotropy , computer science , nanotechnology , magnetic field , quantum mechanics , computer hardware
Based on magnetic tunnel junctions (MTJs), the magnetic random access memory with the pseudo-spin value film model, the annular structure with slanted cuts is used as free layer and the way to vary coercivity by changing thickness is discarded. With this improvement, the area resistance of the MTJs is reduced. The analysis of the cuts on the annular layer generated from the secondary effects of deposition in the IC process, is made by the micromagnetic simulations. The magnetization reversal characteristics from the analysis reveal the properties of low crosstalk, low RA, high magnetic reluctance, and strong anti-interference.