Open AccessResearch on the capacitance-voltage characteristic of strained-silicon NMOS accumulation capacitor
Author(s) -
Bin Wang,
Heming Zhang,
Huiyong Hu,
Yuming Zhang,
Bin Shen,
Chunyu Zhou,
Yuchen Li,
Lyu Yi
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.057103
Subject(s) - nmos logic , capacitor , materials science , capacitance , mosfet , optoelectronics , silicon , voltage , electrical engineering , transistor , physics , engineering , electrode , quantum mechanics
Accumulation MOS capacitor is more linear than inversion MOS capacitor and is almost independent of the operation frequency. In this paper, we present first the formation mechanism of the plateau, observed in the C-V characteristic of the strained-Si NMOS capacitor, and then a physical model for strained-Si NMOS capacitor in accumulation region. The results from the model show to be in excellent agreement with the experimental data. The proposed model can provide valuable reference for the strained-Si device design, and is has been implemented in the software for extracting the parameter of strained-Si MOSFET.