Open AccessRecent progress in preparation of material and device of two-dimensional MoS2
Author(s) -
Zhanping Lai
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.056801
Subject(s) - molybdenum disulfide , nanoelectronics , graphene , materials science , nanotechnology , semiconductor , transistor , layer (electronics) , band gap , engineering physics , optoelectronics , electrical engineering , physics , voltage , composite material , engineering
After several decade developments the critical dimension of an integrated circuit will reach its limit value in the next 10-15 years, and the substitute materials been to be researched. Graphene has beed considered the most likely candidate, however, pristine graphene does not have a bandgap, a property that is essential for many application, including transistors. The two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much attention due to its excellent semiconductor property and potential applications in nanoelectronics. The device preparation, two-dimensional material research and property analysis of MoS2 are summarized and the trend for future research on large sigle-layer MoS2 crystal is presented.