Open AccessStudy on the p-type conductivities and Raman scattering properties of N+ ion-implanted O-rich ZnO thin films
Author(s) -
Yang Tian-Yong,
Chunyang Kong,
Haibo Ruan,
Guoping Qin,
Wanjun Li,
Weiwei Liang,
Meng Xiang-Dan,
Zhao Yonghong,
Liang Fang,
Yuting Cui
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.037703
Subject(s) - raman spectroscopy , materials science , raman scattering , annealing (glass) , doping , ion , analytical chemistry (journal) , hall effect , thin film , sputter deposition , electrical resistivity and conductivity , optoelectronics , sputtering , nanotechnology , optics , composite material , chemistry , physics , organic chemistry , chromatography , electrical engineering , engineering
The p-type N doped ZnO thin films are fabricated using radio-frequency magnetron sputtering technique in O-rich growth condition together with the direct N+ ion-implantation and annealing. The conductivities and Raman scattering properties of the samples are studied by Hall measurements and Raman spectra respectively. Hall measurements indicate that the optimal p-type ZnO film can be obtained when the sample is annealed at 600 ℃ for 120 min in N2 ambience, and its hole concentration is about 2.527×1017 cm-3. N+-implantation induces three additional vibrational modes in ZnO, which are located at 274.2, 506.7 and 640.4 cm-1 respectively. In the process of the annealing, by comparing the electrical properties and Raman speetra of the samples, we find that the competition between intrinsic donor defects and the activation of N acceptors plays a crucial role in the p-type formation of ZnO:N films during annealing.