Open AccessRoom temperature deposition of highly conductive and transparent H and W co-doped ZnO film
Author(s) -
Yanfeng Wang,
Xiaodan Zhang,
Qian Huang,
Yang Liu,
Changchun Wei,
Ying Zhao
Publication year - 2013
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.62.017803
Subject(s) - materials science , crystallite , electrical resistivity and conductivity , doping , analytical chemistry (journal) , crystallinity , sputter deposition , thin film , ceramic , volumetric flow rate , tungsten , zinc , sputtering , band gap , oxide , optoelectronics , nanotechnology , composite material , metallurgy , engineering , chemistry , physics , chromatography , quantum mechanics , electrical engineering
Highly conductive and transparent hydrogen and tungsten co-doped zinc oxide (HWZO) thin films are prepared at room temperature by pulsed DC magnetron sputtering using a WZO (98.5 wt.% ZnO, 1.5 wt.% WO3) ceramic target with different H2 flow rates. The influence of H2 flow rate on the structural, compositional, elemental valence state as well as electrical and optical properties are systematically investigated. The results indicate that the incorporation of H does not change the structure of tungsten doped zinc oxide (WZO) namely, both WZO and HWZO films are polycrystalline with hexagonal structure and a preferred orientation along c-axis, respectively whereas the crystallinity is firstly improved and then deteriorated with the increase of H2 flow rate. Furthermore, the reaction between Zn and O can be promoted by the incorporated H. With an optimal H2 flow rate, the carrier concentration increases from 3.32×1020 cm-3 for WZO film to 5.44×1020 cm-3 for HWZO film, and the resistivity decreases from 1.20×10-3 Ω·cm to 7.71×10-4 Ω·cm. The average transmittance in a range of 400-1100 nm is improved from 69.2% to 82.4 %, and the optical band gap is widened from 3.42 eV to 3.58 eV.