Open AccessPassivation and stability of thermal atomic layer deposited Al2O3 on CZ-Si
Author(s) -
Yuan He,
Dou Ya-Nan,
XiaoGuang Ma,
Chen Shao-bin,
Chu Junhao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.248102
Subject(s) - passivation , materials science , atomic layer deposition , thermal stability , solar cell , annealing (glass) , layer (electronics) , aluminium , aluminum oxide , optoelectronics , dielectric , silicon , thermal , composite material , chemical engineering , physics , engineering , meteorology
Atomic layer deposited (ALD) aluminum oxide (Al2O3) has been known as an almost-perfect candidate of passivation dielectric layer for PERC-type c-Si solar cell. Its passivation performance and thermal stability are key issues for industrial PERC c-Si solar cell based on screen-printed technology. In this paper, 20 nm and 30nm Al2O3 films are synthesized on the solar grade CZ-Si by thermal atomic layer deposition. The results show that the effective lifetime can reach 100 μs for CZ-Si after annealing and is kept a half after the sintering process in the industrial beltline furnace, and the materials can be used in PERC-type solar cell. The SEM image demonstrates that the blisters occur in a thicker Al2O3 film, which explains why the passivation and thermal stability of 30 nm film are inferior to those of 20 nm film.