Open AccessAnalysis of 532nm long pulse laser-induced thermal decomposition damage to GaAs by semi-analytical method
Author(s) -
Juan Bi,
Guangyong Jin,
Xiaowu Ni,
Xihe Zhang,
Yao Zhi-jian
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.244209
Subject(s) - materials science , laser , millisecond , thermal decomposition , thermal conduction , pulse (music) , irradiation , transient (computer programming) , wavelength , thermal , optics , decomposition , absorption (acoustics) , attenuation coefficient , optoelectronics , composite material , chemistry , physics , thermodynamics , organic chemistry , detector , astronomy , computer science , nuclear physics , operating system
Considering the fact that the GaAs has the characteristics of thermal decomposition, the thermal decomposition damage to GaAs surface, induced by a 532 nm wavelength long pulse laser with a millisecond pulse width is studied by the heat conduction theoretical and semi-analytical method. First, the calculation models of two-dimensional axisymmetric transient temperature field and the surface thermal decomposition damage threshold for long pulse laser irradiation of GaAs are established, and the transient temperature fields and the thermal decomposition damage thresholds in GaAs with different absorption rates are simulated. The results show that the higher absorption rate causes the higher temperature rise on the surface of material, but the required decomposition damage energy density is lower. With the increase of laser energy density, the decomposition damage occurs more early. This paper has guiding significance and practical value for investigating the interaction between long pulse laser and GaAs and its damage mechanism.