Open AccessGate length dependence of SOI NMOS device response to total dose irradiation
Author(s) -
彭里,
卓青青,
刘红侠,
蔡惠民
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.240703
Subject(s) - transconductance , nmos logic , silicon on insulator , materials science , irradiation , optoelectronics , threshold voltage , gate oxide , transistor , mosfet , radiation , degradation (telecommunications) , voltage , electrical engineering , silicon , optics , physics , engineering , nuclear physics
The gate length dependence of PD SOI NMOS device on total dose irradiation is investigated, which is exposed to 60Co gamma ray at a dose rate of 50 rad(Si)/s. The result shows that the transistor with shorter gate length shows larger radiation-induced interface trap density, which leads to the maximum transconductance degradation. The local floating body effect induces the output characteristic variation of irradiated MOSFET with gate length. After irradiation, the breakdown voltage of short channel SOI device decreases. Due to the buried oxide, the radiation-induced degradation of short channel SOI device is much serious compared with that of long channel SOI device.