Open AccessStudies on the composition of InGaN/AlN quantum dots grown by molecular beam epitaxy
Author(s) -
Yibin Hu,
Zhibiao Hao,
Jiannan Hu,
Lang Niu,
Lai Wang,
Yi Luo
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.237804
Subject(s) - molecular beam epitaxy , materials science , photoluminescence , quantum dot , optoelectronics , diffraction , reflection (computer programming) , electron diffraction , relaxation (psychology) , exciton , quantum well , epitaxy , condensed matter physics , optics , nanotechnology , physics , laser , layer (electronics) , computer science , programming language , psychology , social psychology
In this article we report on the green-light wavelength InGaN/AlN quantum dots (QDs) grown by molecular beam epitaxy, and propose a method to determine the composition of the InGaN QDs by combining reflection high-energy electron diffraction in-situ measurement and photoluminescence measurement, in which the strain relaxation and the influences of strain and quantum-confined Stark effect on the exciton energy are taken into consideration.