DC characteristic research based on surface potential for a-Si:H thin-film transistor | Zendy

Xiaoxue Chen | Zendy; Yao Ruo-he | Zendy

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DC characteristic research based on surface potential for a-Si:H thin-film transistor

Author(s) -

Xiaoxue Chen,

Yao Ruo-he

Publication year - 2012

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.61.237104

Subject(s) - subthreshold conduction , transistor , thin film transistor , materials science , voltage , current (fluid) , surface (topology) , function (biology) , subthreshold slope , threshold voltage , condensed matter physics , optoelectronics , physics , nanotechnology , thermodynamics , quantum mechanics , geometry , mathematics , layer (electronics) , evolutionary biology , biology

In this paper, based on the surface potential model, taking into account both the deep and tail state distributions simultaneously, and using the simplified Fermi-Dirac function, a unified local-state model is obtained. Using the effective characteristic temperature, the unified current-voltage (I-V) model for a-Si:H thin-film transistor a-Si:H TFT is developed. This model can describes all operating regions including subthreshold region, linear area and saturated zone through a single equation. By comparison with the experimental data, it is shown that this model can accurately describe the current voltage characteristic of the a-Si:H TFT.

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