Open AccessDC characteristic research based on surface potential for a-Si:H thin-film transistor
Author(s) -
Xiaoxue Chen,
Ruohe Yao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.237104
Subject(s) - subthreshold conduction , transistor , thin film transistor , materials science , voltage , current (fluid) , surface (topology) , function (biology) , subthreshold slope , threshold voltage , condensed matter physics , optoelectronics , physics , nanotechnology , thermodynamics , quantum mechanics , geometry , mathematics , layer (electronics) , evolutionary biology , biology
In this paper, based on the surface potential model, taking into account both the deep and tail state distributions simultaneously, and using the simplified Fermi-Dirac function, a unified local-state model is obtained. Using the effective characteristic temperature, the unified current-voltage (I-V) model for a-Si:H thin-film transistor a-Si:H TFT is developed. This model can describes all operating regions including subthreshold region, linear area and saturated zone through a single equation. By comparison with the experimental data, it is shown that this model can accurately describe the current voltage characteristic of the a-Si:H TFT.