Open AccessQuantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors
Author(s) -
Xi Shanbin,
Wei Lü,
Dazhong Ren,
Dong Zhou,
W.H. Lin,
Sun Jing,
Xue Wu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.236103
Subject(s) - bipolar junction transistor , materials science , transistor , optoelectronics , gate oxide , radiation , irradiation , oxide , annealing (glass) , gate voltage , voltage , electrical engineering , optics , physics , metallurgy , engineering , nuclear physics , composite material
A new test structure of gate controlled lateral PNP bipolar transistors designed and fabricated. An independent gate terminal is patterned on the oxide layer above the active base region of normal lateral PNP bipolar transistors. According to the gate sweep technique, by sweeping the voltage applied to the gate terminal, one can obtain the characteristic of base current versus gate voltage. The quantitative variations of oxide trapped charges and interface traps are analytically estimated and numerically calculated, and the radiation induced defects in the gate controlled lateral PNP bipolar transistors during 60Co-γ irradiation and annealing at room temperature are separated independently. The test structures and measurements of the bipolar transistors used in the experiment are introduced in detail in this paper.