Open AccessStructural analysis of Cu(In1-xGax)Se2 multi-layer thin film solar cells
Author(s) -
Pan Hui-Ping,
Bo Lian-Kun,
Huang Tai-Wu,
Yi Zhang,
Tao Yu,
Yao Shu-De
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.228801
Subject(s) - copper indium gallium selenide solar cells , materials science , thin film , auger electron spectroscopy , annealing (glass) , layer (electronics) , analytical chemistry (journal) , optoelectronics , nanotechnology , metallurgy , chemistry , physics , chromatography , nuclear physics
In this paper, the complex structure of CuInGaSe (CIGS), which is fabricated by a two-step progress (the deposition step and the salinization) or co-evaporation method, is analyzed in detail by several methods. Rutherford backscattering spectroscopy (RBS) shows unique advantage for investigating CIGS multi-layer. For the two-step CIGS thin films, both Ga and In atoms reveal a gradient distribution. Such a distribution that Ga atoms are more likely to be localized in a deeper layer of surface than in a shallow layer of surface, has no relation with the Mo layer. RBS and Auger electron spectroscopy (AES) prove that there appears diffusion in the interfaces of multi-layers, especially the interfaces of CdS and CIGS, Mo and CIGS. X-ray fluorescence (XRF) indicates that CIGS thin film presents the highest efficiency when the content ratio of In and Ga atoms is 0.7:0.3. Structural investigation by X-ray diffraction reveals the improved crystalline quality after annealing.