Open AccessProgress of the improved mobilities of organic field-effect transistors based on dielectric surface modification
Author(s) -
Shi Wei-Wei,
Liwen,
Moonsuk Yi,
Linghai Xie,
Weiwei Weiwei,
Wei Huang
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.228502
Subject(s) - organic field effect transistor , materials science , dielectric , surface modification , organic semiconductor , transistor , semiconductor , field effect transistor , gate dielectric , electron mobility , surface roughness , monolayer , surface energy , optoelectronics , polymer , field effect , nanotechnology , chemical physics , chemical engineering , composite material , chemistry , voltage , electrical engineering , engineering
The surface property of the dielectric has a significant influence on growth, morphology, order of the organic semiconductor, and charge carrier transport. The relevant research shows that the mobility of organic field-effect transistor could be effectively improved via ameliorating the surface property of the dielectric. The purpose of this review is to introduce the main factors, including the roughness and the surface energy of dielectric, which exert a tremendous influence on the field effect mobility of OFET, and chiefly describe the progress of the two common methods used for the dielectric modification, viz., the self-assembled monolayer modification and the polymer modification. Finally, the novel applications at present are summarized in this review and some perspectives on the research trend are proposed.