Open AccessNumerical simulation of enhanced glow discharge plasma immersion ion implantation using three-dimensional PIC/MC model
Author(s) -
He Fu-Shun,
Liuhe Li,
Fen Li,
Dun Dan-Dan,
Tao Chan-Cai
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.225203
Subject(s) - plasma , plasma immersion ion implantation , materials science , ion , glow discharge , atomic physics , anode , plasma parameters , ion implantation , electron density , physics , electrode , nuclear physics , quantum mechanics
Enhanced glow discharge plasma immersion ion implantation is self-consistently simulated using a three-dimensional PIC/MC model. The information about ion counts, space potential, plasma density and ion incident dose is obtained. The results show that the sheath has fully expanded at 5 μs. There is a stable equilibrium of ion counts at 15 μs, which corroborates the characteristic of self-sustaining glow discharge of EGD-PIII. In the space just below anode where is found a highest plasma density, verifying the electron focusing effect. The rate of implantation is steady and the incident dose is relatively uniform except at the rim of target. A higher pulse negative bias may increase the injection rate but reduce the dose uniformity at the same time.