Simulation and design of a W-band extended interaction klystron amplifier
Author(s) -
Wuqiang Yang,
Xu Zhou,
Lin Zhou,
Wen-Jun Li,
Tang Chuan-Xiang
Publication year - 2012
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.224101
Subject(s) - klystron , amplifier , physics , extremely high frequency , power (physics) , voltage , beam (structure) , w band , electrical engineering , optics , optoelectronics , engineering , cmos , quantum mechanics
Extended interaction klystron amplifier is a very important high power millimeter wave source with many actual and potential applications. Based on the electromagnetic simulation software and 3D PIC code, a W-band extended interaction klystron amplifier is designed. In the PIC simulation, when the beam voltage is 30 kV and current is 8 A, the device can generate a 43 kW output power at 96.8 GHz with an efficiency of 18% and a gain of 49.3 dB.
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