z-logo
open-access-imgOpen Access
Simulation and design of a W-band extended interaction klystron amplifier
Author(s) -
Wuqiang Yang,
Xu Zhou,
Lin Zhou,
Wen-Jun Li,
Tang Chuan-Xiang
Publication year - 2012
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.224101
Subject(s) - klystron , amplifier , physics , extremely high frequency , power (physics) , voltage , beam (structure) , w band , electrical engineering , optics , optoelectronics , engineering , cmos , quantum mechanics
Extended interaction klystron amplifier is a very important high power millimeter wave source with many actual and potential applications. Based on the electromagnetic simulation software and 3D PIC code, a W-band extended interaction klystron amplifier is designed. In the PIC simulation, when the beam voltage is 30 kV and current is 8 A, the device can generate a 43 kW output power at 96.8 GHz with an efficiency of 18% and a gain of 49.3 dB.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom