Open AccessThe total dose irradiation effects of SOI NMOS devices under different bias conditions
Author(s) -
Zhuo Qing-Qing,
Hongxia Liu,
Zhenchuan Yang,
Cai Hui-Min,
Yue Hao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.220702
Subject(s) - nmos logic , silicon on insulator , materials science , irradiation , optoelectronics , threshold voltage , biasing , voltage , gate oxide , current (fluid) , electrical engineering , silicon , physics , transistor , nuclear physics , engineering
Based on 0.8 μm process, in the paper we investigate the total dose irradiation effects of SOI NMOS devices under different bias conditions. The devices are exposed to 60Co γ ray at a dose rate of 50 rad (Si)/s. In higher gate bias condition, the drain leakage current increases because more positive charges are trapped in the buried oxide. When the applied gate voltage is larger than the threshold voltage, its drain current of the front gate in ID-VG characteristic suddenly increases and the body current presents a unique upside down bell shape.