Open AccessInvestigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs
Author(s) -
Yu Chen-Hui,
Luo Xiang-dong,
Weixing Zhou,
Quan Luo,
Peisheng Liu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.207301
Subject(s) - materials science , high electron mobility transistor , heterojunction , optoelectronics , layer (electronics) , gallium nitride , transistor , electron , wide bandgap semiconductor , threshold voltage , voltage , nanotechnology , electrical engineering , physics , quantum mechanics , engineering
A series of AlGaN/GaN/InGaN/GaN double-heterojunction high-electron-mobility-transistors (DH-HEMT) is fabricated with GaN channel layer thicknesses from 6 nm to 20 nm by two-dimensional (2D) numerical simulations. A new idea for optimizating of DH-HEMT structure is proposed. The hot electron effect and self-heating effect are investigated by using hydrodynamic model. Current collapse and negative differential conductance are observed to be directly relevant to GaN channel layer thickness. DH-HEMT with thicker GaN channel layer can confine electrons better in channel, which significantly diminishes the penetration ability of hot electrons from channel layer to buffer layer under high voltage. Increasing the thickness of GaN channel layer appropriately can effectively restrict current collapse and negative differential conductance, and consequently improve device performance under high voltage condition.