Open AccessPreparation and structure of CuInS2 film by the direct current triode sputtering
Author(s) -
Yu Dan-Yang,
Kobayashi-Yasuyuki,
Kobayashi-Satoshi
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.198102
Subject(s) - sputtering , triode , materials science , chalcopyrite , thin film , impurity , substrate (aquarium) , electron microprobe , deposition (geology) , carbon fibers , partial pressure , metal , analytical chemistry (journal) , chemical engineering , copper , composite material , metallurgy , nanotechnology , oxygen , chemistry , resistor , voltage , engineering , oceanography , composite number , biology , paleontology , chromatography , quantum mechanics , physics , organic chemistry , sediment , geology
CuInS2 thin films are deposited on Pyrex slide glass substrates by direct current triode sputtering using CS2 as a reactive gas and Cu/In mixed metal plate as sputtering target. The effects of substrate temperature and area ratio of Cu to In on the crystalline structure and composition of CuInS2 films are discussed under the same growth condition (0.02 Pa of CS2 partial pressure). When sputtering time is 2 h, their thickness are obtained to be 1-2 μm. The CuInS2 films are characterized by EPMA, XRD, and so on. The results show that the optimal CuInS2 films are obtained at a ratio of 1.4 and growth temperatures of 150 ℃, 250 ℃ and 350 ℃, and that these films each have a chalcopyrite structure. The content of carbon impurity in each of the as-deposited CuInS2 films is found to be about 8.9%.