Open AccessThe passivation of Al2O3 and its applications in the crystalline silicon solar cell
Author(s) -
Xiang Zhang,
Bangwu Liu,
Xun Yang,
Chaobo Li,
Jie Liu,
Zhonghua Shen
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.187303
Subject(s) - passivation , materials science , common emitter , solar cell , crystalline silicon , silicon , layer (electronics) , optoelectronics , stack (abstract data type) , deposition (geology) , nanotechnology , computer science , programming language , paleontology , sediment , biology
The material characteristics and one of the preparation methods, atomic layer deposition of Al2O3 are introduced. The passivation mechanisms (chemical passivation and field-effect passivation) of Al2O3 films are demonstrated comprehensively, and optimization methods from the angles of film thickness, thermal stability and stack passivation are illuminated. The application of Al2O3 passivation in the crystalline silicon solar cell is provided, including passivated emitter rear locally diffused cell and passivated emitter and rear cell. Finally, the future study of the Al2O3 passivation process and the application to industry production are proposed.