Open AccessTEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD
Author(s) -
Zhiyu Lin,
Jincheng Zhang,
Shengrui Xu,
Ling Lü,
Ziyang Liu,
Ma Jun-Cai,
Xiaoxiao Xue,
Xue Jun-Shuai,
Yue Hao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.186103
Subject(s) - vicinal , sapphire , metalorganic vapour phase epitaxy , materials science , dislocation , substrate (aquarium) , optoelectronics , annihilation , epitaxy , nanotechnology , composite material , optics , chemistry , layer (electronics) , biology , ecology , laser , physics , organic chemistry , quantum mechanics
Quality properties and internal defects of unintentionally doped GaN films grown on 0.3 vicinal sapphire (0001) substrates by MOCVD are investigated by TEM. The results show that plenty of dislocations in the GaN films prepared on vicinal sapphire substrates are annihilated in the areas with a distance of 0.8 m away from substrates, and that dislocations gather in the GaN films. Based on these phenomena, a mechanism for dislocation annihilation in the GaN film prepared on vicinal substrate is proposed, which is capable of explaining the fact that vicinal substrates are able to improve the qualities of GaN films.