Open AccessElectronic properties of disordered bilayer hexagonal boron nitride quantum films
Author(s) -
Xiao Hu,
Yuanping Chen,
Yang Kaike,
Wei Xiao-Lin,
Limei Sun,
Jianxin Zhong
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.178101
Subject(s) - materials science , bilayer , hexagonal boron nitride , condensed matter physics , monolayer , boron nitride , electronic structure , chemical physics , nanotechnology , physics , chemistry , membrane , graphene , biochemistry
Based on the Anderson tight-binding model, the electronic properties of disordered bilayer hexagonal boron nitride quantum films are investigated. Our numerical results show that the electrons in a disordered bilayer hexagonal boron nitride quantum film are localized, presenting an insulating property. However, for the monolayer disordered bilayer hexagonal boron nitride quantum film, the energy spectrum has persistent mobility edges which are independent of the disorder strength. This indicates that a metal-insulator transition occurs in the monolayer disorder structure. This is similar to the case in an order-disorder separated quantum film. The results could offer useful information for understanding and manipulating the electronic properties of bilayer hexagonal boron nitride quantum films.