Open AccessResearch on the total dose effects for domestic VDMOS devices used in satellite
Author(s) -
Bo Gao,
Gang Liu,
Lixin Wang,
Han Zheng-sheng,
Yanfei Zhang,
Chunling Wang,
Wen Jingchao
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.176107
Subject(s) - materials science , irradiation , ionizing radiation , voltage , radiation , optoelectronics , leakage (economics) , satellite , nuclear engineering , electrical engineering , engineering physics , physics , optics , engineering , aerospace engineering , nuclear physics , economics , macroeconomics
Total dose effects of domestic VDMOS devices used in satellite under different bias conditions are investigated. The dependences of the typical electrical parameters such as threshold voltage, breakdown voltage, on-state resistance, and leakage current on total dose are discussed. The experimental results show that the electrical parameters of the irradiated domestic VDMOS devices fulfill the design requirements. These devices also meet the work demand in a complex ionizing total dose irradiation environment. In addition, our experimental results are meaningful and important for further improving the design and the process of the others types of domestic radiation hardened VDMOS devices.