Open AccessFabrication and characterization of single Nb/NbxSi1-x/Nb Josephson junction for voltage standard
Author(s) -
曹文会,
李劲劲,
钟青,
郭小玮,
贺青,
迟宗涛
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.170304
Subject(s) - josephson effect , materials science , pi josephson junction , niobium , fabrication , voltage , optoelectronics , superconductivity , condensed matter physics , etching (microfabrication) , superconducting tunnel junction , layer (electronics) , nanotechnology , physics , medicine , alternative medicine , pathology , metallurgy , quantum mechanics
The core device of Modern programmable Josephson voltage standard is Josephson junction array. The most advantageous Josephson junction array is Nb/NbxSi1-x/Nb material array. The advantages of Nb/NbxSi1-x/Nb material Josephson junction are that three-layer film production process is simple, Nb and NbxSi1-x etching processes are the same and NbxSi1-x potential barrier layer components can be easily adjusted. In this paper, we investigate the NbxSi1-x/Nb single Josephson junction in National Institute of Metrology. Through measuring the dc current-voltage characteristics under low temperature (4.2 K), superconducting tunneling current and a zero voltage state jumping to voltage state are observed clearly, finally the measurement results are discussed. The work is the first study on Nb/NbxSi1-x/Nb single Josephson junction in China.