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Resistively detected nuclear magnetic resonance: recent developments
Author(s) -
Hongwu Liu,
K. F. Yang,
Tetsuya D. Mıshıma,
M. B. Santos,
Kenzo Nagase,
Y. Hirayama
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.147302
Subject(s) - semiconductor , electron , polarization (electrochemistry) , physics , condensed matter physics , fermi gas , materials science , nuclear magnetic resonance , optoelectronics , chemistry , nuclear physics
The resistively detected nuclear magnetic resonance (RDNMR), a high-sensitivity NMR technique developed by Klaus von Klitzing's group in 1988, is used to investigate exotic electron and nuclear spin properties in GaAs two-dimensional electron gases (2DEGs). Because the dynamic nuclear polarization (DNP) approach required for the RDNMR demonstration is strongly dependent on unique material properties of GaAs, this highly-sensitive technique has not yet been applied to 2DEGs confined in other host semiconductors. More recently, we have developed a novel DNP method for demonstration of RDNMR in a 2DEG within the typical narrow-gap semiconductor InSb. In this article, we focus on the discussion of our newly-developed DNP method, experimental details and results as well as future prospects after some preliminary remarks on the principles of RDNMR and DNP.

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