Open AccessOptimization of quantum dot solar cells based on structures of GaAs/InAs-GaAs/ZnSe
Author(s) -
姜冰一,
郑建邦,
王春锋,
郝娟,
曹崇德
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.138801
Subject(s) - quantum dot , solar cell , materials science , optoelectronics , energy conversion efficiency , theory of solar cells , quantum dot solar cell , quantum dot laser , gallium arsenide , quantum efficiency , quantum well , solar cell efficiency , semiconductor , physics , optics , polymer solar cell , semiconductor laser theory , laser
Based on the structures of GaAs/InAs-GaAs/ZnSe P-i-N quantum dot solar cells, according to the optical principle and diffusion theory, mathematic model describing the relationship between photogenerated electron current density and thickness of layer is proposed, and the effect of the quantum dot layer on the characteristics of solar cell is analyzed quantitatively for improving the power conversion efficiency of quantum dot solar cells. Simulations show that the optimal thicknesses of P(GaAs) and N(ZnSe) are 1541 nm and 78 nm respectively when the i layer thickness is 3000 nm, and the power conversion efficiency of solar cell is 20.1% at a single wavelength; At the same time, the volume of quantum dot and the temperature affect I-V property of quantum dot solar cell, and the value of open voltage reduces with the increase of the volume of quantum dot and temperature, so that the power conversion efficiency will be reduced.