Open AccessThe effect of electrostatic discharge on the I-V and low frequency noise characterization of Schottky barrier diodes
Author(s) -
Yudong Liu,
Du Lei,
Sun Peng,
WenHao Chen
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.137203
Subject(s) - materials science , noise (video) , electrostatic discharge , schottky diode , diode , anode , infrasound , stress (linguistics) , schottky barrier , cathode , optoelectronics , flicker noise , voltage , plasma , noise figure , physics , electrical engineering , acoustics , amplifier , electrode , artificial intelligence , computer science , image (mathematics) , engineering , linguistics , philosophy , cmos , quantum mechanics
Based on the analysis of thermal electron emission, the model of the carrier mobility fluctuation and the white noise theory, the effect of electrostatic discharge (ESD) on the I-V and low frequency noise of Schottky barrier diode (SBD) is discussed in this paper. The different Human Body Model(HBM) ESD injected times with the same voltage peaks are applied to the cathode and anode separately. It is found that the diode subjected to the cathode stress shows greater degradation than subjected to the anode stress, and the magnitude of noise shows significant change. With the increase of ESD injected times, the forward characteristic has no change, while reverse current almost increases at each time. The magnitudes of forward and reverse 1/f noise increase all the time. In view of the relationship between defects and damage, and the noise sensibility, the low frequency noise can serve as a tool for researching the sensitivity to the electrostatic discharge damage of SBD.