Open AccessThe model of valence-band dispersion for strained Ge/Si1-xGex
Author(s) -
Xianying Dai,
Yang Cheng,
Jianjun Song,
Heming Zhang,
Hao Yue,
Zheng Ruo-Chuan
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.137104
Subject(s) - effective mass (spring–mass system) , materials science , condensed matter physics , hamiltonian (control theory) , valence (chemistry) , anisotropy , valence band , germanium , conduction band , electronic band structure , band gap , semimetal , physics , optoelectronics , silicon , optics , quantum mechanics , electron , mathematical optimization , mathematics
Based on the kp theory, the valence-band dispersion model for biaxial strained Ge/Si1-xGex is derived by taking strained Hamiltonian perturbation into account. The model can be used to calculate the valence band structure and hole effective mass along arbitrarily k wavevector direction in strained Ge grown on arbitrarily oriented relaxed Si1-xGex virtual substrate. The MATLAB simulation results of the model show that by comparison with relaxed Ge, the more anisotropy of the hole effective mass occurs in strained Si1-xGex and the hole effective mass of the top valence band decreases with the increase of Ge fraction. The results can supply valuable references to the conduction channel design related to stress and orientation in the Si-based strained Ge MOS devices and integrated circuits.