Open AccessResearch on shot noise suppression in quasi-ballistic transport nano-mOSFET
Author(s) -
Xiaofei Jia,
Lan Du,
Tang Dong-He,
Tinglan Wang,
WenHao Chen
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.127202
Subject(s) - fano factor , shot noise , mosfet , coulomb , noise (video) , physics , ballistic conduction , voltage , nano , doping , subthreshold conduction , condensed matter physics , quantum mechanics , computer science , transistor , optics , artificial intelligence , detector , image (mathematics) , electron
Previous studies of shot noise suppression in nano-MOSFET either ignored its suppression or emphasized only its existence but gave no deeper research. In this paper, based on the Navid model, the expressions of shot noise suppression factor (Fano) in quasi-ballistic transport nano-MOSFETs are derived with separately considering Fermi effect, Coulomb interaction and the combination of the two effects. The variations of suppression-factors with source-drain voltage, gate voltage, temperature and source-drain doping are investigated. The results we obtained with considering the combination of the two effects are consistent with those from experiments, and the theoretical explanation is given.