Open AccessInvestigation on regulating the topological electronic structure of the half-Heusler compound LaPtBi
Author(s) -
Xiaoming Zhang,
Guodong Liu,
Dulin Yin,
Enke Liu,
Wenhong Wang,
Guangheng Wu,
Zhongyuan Liu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.123101
Subject(s) - topological insulator , heusler compound , fermi level , condensed matter physics , materials science , electronic band structure , band gap , electronic structure , density functional theory , lattice (music) , topology (electrical circuits) , lattice constant , physics , quantum mechanics , electron , diffraction , mathematics , combinatorics , acoustics
Using the full-potential linearized augmented plane-wave method based on the density functional theory, we investigate the influences of chemical substitution and uniaxial strain on the topological electronic structure of the half-Heusler compound LaPtBi. It is shown that the 8 band which is protected by the cubic symmetry of the C1b structure can open and form a gap by substituting Sc element for La or Pd for Pt in LaPtBi compound. However, in the case of distorting cubic lattice by using a uniaxial strain, not only the gap mentioned above appears, but also the Fermi level can be tuned regularly. Thus the LaPtBi compound becomes a real topological insulator.