Open AccessInfluence of the ambient pressure of Ar on the range of nucleation area of Si nanoparticles
Author(s) -
Chu Li-Zhi,
Deng Ze-Chao,
Xiaohong Ding,
Hongdong Zhao,
Yinglong Wang,
Guangsheng Fu
Publication year - 2012
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.61.108102
Subject(s) - nucleation , materials science , ambient pressure , nanocrystalline material , nanoparticle , raman spectroscopy , fluence , scanning electron microscope , laser ablation , substrate (aquarium) , diffraction , analytical chemistry (journal) , laser , nanotechnology , optics , composite material , chemistry , physics , organic chemistry , thermodynamics , oceanography , chromatography , geology
In order to investigate the range of nucleation area of Si nanoparticles under different pressures, a single crystalline Si target with high resistivity is ablated by a XeCl excimer laser (wavelength 308 nm, laser fluence 3 J/cm2) in an ambient pressure range from 1 to 200 Pa of pure Ar gas. The Si nanocrystalline films are systemically deposited on glass or single crystalline Si substrates that are lined up at a distance of 2.0 cm under the ablation point. Raman and X-ray diffraction spectra indicate that the films are nanocrystalline. Scanning electron microscope images of the films show that the ambient pressure effect on the average size and the distributing range of Si nanoparticles on the substrate. According to the method of determining the location of nucleation area, it is found that the range of nucleation area of Si nanoparticles first broadens and then narrows with the increase of ambient pressure. The dynamics is analysed theoretically to explain the results.